• DocumentCode
    3381913
  • Title

    A highly reliable embedded p-channel SONOS memory using dynamic programming method

  • Author

    Chen, Ying-Je ; Liu, Cheng-Jye ; Lo, Chun-Yuan ; Ting, Yun-Jen ; Hsu, T.H. ; Sun, Wein-Town

  • Author_Institution
    Device Eng. Dept., eMemory Technol. Inc., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    10-14 April 2011
  • Abstract
    In this paper we propose a dynamic programming scheme in p-channel SONOS operation in order to achieve high reliability and scalability. By adopting the new method, cell can perform better writing efficiency and suffer less oxide degradation than the conventional CHE programming. Besides, the low programming current under the low program bias also makes simple circuitry design and small charge pumping area.
  • Keywords
    dynamic programming; flash memories; NeoFlash technology; dynamic programming; flash memory; highly reliable embedded p-channel SONOS memory; Dynamic programming; Hot carriers; Logic gates; Programming; Reliability; SONOS devices; Threshold voltage; P-channel; SONOS; dynamic programming;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium (IRPS), 2011 IEEE International
  • Conference_Location
    Monterey, CA
  • ISSN
    1541-7026
  • Print_ISBN
    978-1-4244-9113-1
  • Electronic_ISBN
    1541-7026
  • Type

    conf

  • DOI
    10.1109/IRPS.2011.5784586
  • Filename
    5784586
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3381913