Title :
Analysis of Edge Wordline Disturb in multimegabit charge trapping flash NAND arrays
Author :
Zambelli, Cristian ; Chimenton, Andrea ; Olivo, Piero
Author_Institution :
Dipt. di Ing., Univ. degli Studi di Ferrara, Ferrara, Italy
Abstract :
The Edge Wordline Disturb (EWD) represented a reliability issue on traditional Flash NAND memories, evidenced as an unwanted positive threshold voltage shift of all the cells belonging to the first wordline (WL0) connected to the Ground Select Transistor (GSL). In this work, throughout the experimental characterization of Multimegabit arrays it has been investigated the presence and the physical nature of the EWD in Charge Trapping (CT) NAND Flash, emphasizing its dependency on parameters such as the programming voltage, the inhibit voltage and device aging.
Keywords :
NAND circuits; electron traps; flash memories; integrated circuit reliability; device aging; edge wordline disturb; flash NAND memory; ground select transistor; multimegabit charge trapping flash NAND array; programming voltage; reliability; threshold voltage shift; Electron traps; Flash memory; Logic gates; Programming; Threshold voltage; Transistors; Voltage measurement;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2011 IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-9113-1
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2011.5784587
