• DocumentCode
    3381981
  • Title

    Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers with low threshold currents grown by gas-source molecular beam epitaxy

  • Author

    Thiagarajan, P. ; Giudice, G.E. ; Temkin, H. ; Robinson, G.Y.

  • Author_Institution
    Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
  • fYear
    1996
  • fDate
    13-18 Oct. 1996
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers grown by gas-source molecular beam epitaxy with low threshold currents are reported. Threshold currents as low as 1.1 mA at 20/spl deg/C and 6.1 mA at 100/spl deg/C were measured.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1.1 mA; 1.3 mum; 100 C; 20 C; 6.1 mA; InAsP-InGaAsP; InAsP-InGaAsP lasers; gas-source molecular beam epitaxy; low threshold currents; Chemical lasers; Current measurement; Fiber lasers; Gas lasers; Indium phosphide; Optical reflection; Power lasers; Quantum well lasers; Semiconductor lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1996., 15th IEEE International
  • Conference_Location
    Haifa, Israel
  • Print_ISBN
    0-7803-3163-X
  • Type

    conf

  • DOI
    10.1109/ISLC.1996.553754
  • Filename
    553754
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3381981