A high-performance bandgap reference with advanced curvature-compensation

Author

Zhou, Zekun ; Xu, Xiangzhu ; Shi, Yue ; Ming, Xin ; Zhang, Bo

Author_Institution

State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2011

fDate

25-28 Oct. 2011

Firstpage

524

Lastpage

527

Abstract

A high-performance bandgap reference (BGR) with segmented compensation is proposed in this paper. In order to realize high-order curvature compensation, a voltage proportional to V_be/ß is used in lower temperature, and a voltage with more positive TC is added in higher temperature. The proposed BGR has been simulated with NEC 0.6μm BCD technology. The temperature coefficient (TC) is 5.4ppm/μC with the temperature ranged from -40°C to 80°C. There is only 0.1mV change in output voltage with supply voltage ranging from 2V to 5V. The power supply rejection ratio (PSRR) is 87dB at 3V supply voltage and room temperature without any filtering capacitor. The maximum power dissipation is only 0.04mW.

Keywords

BIMOS integrated circuits; compensation; reference circuits; NEC BCD technology; advanced curvature-compensation; high-order curvature compensation; high-performance bandgap reference; power supply rejection ratio; segmented compensation; size 0.6 mum; temperature -40 degC to 80 degC; temperature 293 K to 298 K; temperature coefficient; voltage 2 V to 5 V;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC (ASICON), 2011 IEEE 9th International Conference on

Conference_Location

Xiamen

ISSN

2162-7541

Print_ISBN

978-1-61284-192-2

Electronic_ISBN

2162-7541

Type

conf

DOI

10.1109/ASICON.2011.6157237

Filename

6157237