A model for energy quantization of single-electron transistor below 10nm

Single-electronic transistor (SET) are considered as the attractive candidates for post-COMS VLSI due to their ultra-small size and low power consumption. Along with the size of coulomb island become smaller and smaller, the energy quantization of single electron transistor based on charge state come forth and from obviously to more obviously. A qualitative analysis to single-electron transistors base on charge state with discrete energy levels, is introduced in this paper. Compared with other analysis to single-electron transistor based on charge state without discrete energy levels, our result is close to fact. Through the comparison, it can be get that the former is accurate and close to fact compared with the simulator without discrete energy levels, and is very useful for the ASIC design of SET devices.