Title :
Piecewise linear curvature-compensated CMOS bandgap reference
Author :
Huang, Hong-Yi ; Ru-Jie Wang ; Hsu, Shih-Chiang
Author_Institution :
Grad. Inst. of Electr. Eng., Nat. Taipei Univ., Taipei
fDate :
Aug. 31 2008-Sept. 3 2008
Abstract :
A low-voltage low-power bandgap voltage reference without using passive components is presented. Using piecewise linear curvature-compensated scheme, a reference voltage of 646.4 mV is generated with a temperature coefficient of 1.7 ppm/degC in the range [-40, +125] degC at 1.8-V supply voltage. A line sensitivity of 0.18 mV/V in the supply voltage range [+1, +1.8] V is achieved. It dissipates a maximum power of 4.4 muW at a 1.8-V supply voltage and 125 degC. The silicon area is 100 times 50 mum2 in 0.18um CMOS process.
Keywords :
CMOS integrated circuits; elemental semiconductors; low-power electronics; piecewise linear techniques; silicon; CMOS; Si; bandgap voltage reference; line sensitivity; low power; piecewise linear curvature-compensated scheme; silicon area; size 0.18 mum; temperature -40 degC to 125 degC; voltage 1.8 V to 1 V; voltage 646.4 mV; CMOS process; Circuits; Feedback loop; MOSFETs; Operational amplifiers; Photonic band gap; Piecewise linear techniques; Resistors; Temperature distribution; Threshold voltage;
Conference_Titel :
Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
Conference_Location :
St. Julien´s
Print_ISBN :
978-1-4244-2181-7
Electronic_ISBN :
978-1-4244-2182-4
DOI :
10.1109/ICECS.2008.4674852
