10 Gbit/s long wavelength monolithic integrated optoelectronic receiver grown on GaAs

Author

Hurm, V. ; Benz, W. ; Berroth, M. ; Bronner, W. ; Fink, T. ; Haupt, M. ; Kohler, K. ; Ludwig, M. ; Raynor, B. ; Rosenzweig, J.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

fYear

1996

fDate

21-25 Apr 1996

Firstpage

435

Lastpage

438

Abstract

The first 10 Gbit/s 1.3-1.55 μm wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 μm gate length AlGaAs-GaAs HEMT process. At a wavelength of 1.3 μm the integrated InGaAs MSM photodiode has a DC responsivity of 0.34 A/W. The photoreceiver bandwidth is 7.1 GHz and its sensitivity is better than -14.7 dBm (BER=10^-9)

Keywords

HEMT integrated circuits; digital communication; gallium arsenide; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodiodes; 0.3 micron; 1.3 to 1.55 micron; 10 Gbit/s; 7.1 GHz; AlGaAs-GaAs; AlGaAs-GaAs HEMT process; GaAs; GaAs substrate; InGaAs; integrated InGaAs MSM photodiode; long wavelength optoelectronic receiver; monolithic integrated optoelectronic receiver; photoreceiver; Absorption; Artificial intelligence; Differential amplifiers; Fingers; Gallium arsenide; Indium gallium arsenide; Integrated optoelectronics; Photodiodes; Substrates; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492275

Filename

492275