Title :
10 Gbit/s long wavelength monolithic integrated optoelectronic receiver grown on GaAs
Author :
Hurm, V. ; Benz, W. ; Berroth, M. ; Bronner, W. ; Fink, T. ; Haupt, M. ; Kohler, K. ; Ludwig, M. ; Raynor, B. ; Rosenzweig, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
The first 10 Gbit/s 1.3-1.55 μm wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 μm gate length AlGaAs-GaAs HEMT process. At a wavelength of 1.3 μm the integrated InGaAs MSM photodiode has a DC responsivity of 0.34 A/W. The photoreceiver bandwidth is 7.1 GHz and its sensitivity is better than -14.7 dBm (BER=10-9)
Keywords :
HEMT integrated circuits; digital communication; gallium arsenide; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; photodiodes; 0.3 micron; 1.3 to 1.55 micron; 10 Gbit/s; 7.1 GHz; AlGaAs-GaAs; AlGaAs-GaAs HEMT process; GaAs; GaAs substrate; InGaAs; integrated InGaAs MSM photodiode; long wavelength optoelectronic receiver; monolithic integrated optoelectronic receiver; photoreceiver; Absorption; Artificial intelligence; Differential amplifiers; Fingers; Gallium arsenide; Indium gallium arsenide; Integrated optoelectronics; Photodiodes; Substrates; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492275
