Title :
A study of second saturation effect of OPTVLD NMOS
Author :
Du, Wenfang ; Chen, Xingbi
Author_Institution :
State Key Labs. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A detail analysis of the mechanism of output characteristic of OPTimized Variation Lateral Doping (OPTVLD) N-type MOS is presented in this paper. While a first current saturation of channel current is caused by the parasitic Junction FET (JFET), a second saturation is found in the state of high level drain current-voltage, which is explained by the enhancement of drain current with the increasing of drain voltage at high gate voltage due to that the carriers introduced by current modulate the electric field and cause intense impact ionization effect. It is expected that the analysis presented here can be used to improve the output characteristic of OPTVLD NMOS.
Keywords :
MOS integrated circuits; field effect transistors; impact ionisation; OPTVLD N-type MOS; OPTVLD NMOS; channel current; current saturation; drain current enhancement; drain voltage; electric field; high gate voltage; high level drain current-voltage; impact ionization effect; optimized variation lateral doping; output characteristic; parasitic junction FET; second saturation effect; JFETs; MOS devices; Switches;
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
DOI :
10.1109/ASICON.2011.6157264
