Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs

In this work, we investigate analytically quantum mechanical (QM) effects on the threshold voltage (V_TH) shift of the surrounding-gate (SG) MOSFETs. We show how V_TH is influenced with QM effects with the considerations of (110)-silicon (Si) orientation and (100)-Si orientation. When the radius of an SG MOSFET is small (<;3nm), the V_TH shift will be significant, and one should be careful in the use of a device with an extremely small silicon body radius. The analytical results are compared with those obtained by B. Yu et al., and good agreement is observed.