Probabilistic defect occupancy model for NBTI

Author

Martin-Martinez, J. ; Kaczer, B. ; Toledano-Luque, M. ; Rodriguez, R. ; Nafria, M. ; Aymerich, X. ; Groeseneken, G.

Author_Institution

Dept. Eng. Electron., Univ. Autonoma de Barcelona, Barcelona, Spain

fYear

2011

fDate

10-14 April 2011

Abstract

A new Negative Bias Temperature Instability (NBTI) model based on the probability of charge/discharge of defects in devices is presented. The model correctly describes the main experimental NBTI features, such as the threshold voltage shift (ΔV_T) evolution under DC or AC stresses, its frequency and duty cycle dependence and the statistical ΔV_T distribution in small transistors. Finally, the model is used to explain the dependence of NBTI degradation on the stress/relaxation times, frequency and duty cycle in terms of defect occupancy.

Keywords

discharges (electric); failure analysis; field effect transistors; semiconductor device reliability; statistical distributions; AC stresses; DC stresses; NBTI degradation; NBTI model; charge/discharge; negative bias temperature instability; pFET; probabilistic defect occupancy; statistical distribution; stress/relaxation times; threshold voltage shift; Charge carrier processes; Discharges; Logic gates; Oscillators; Predictive models; Stress; Time frequency analysis; CMOS technologies; Monte Carlo simulation; NBTI; Reliability; modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2011 IEEE International

Conference_Location

Monterey, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-9113-1

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2011.5784605

Filename

5784605