Analysis of recoverable and non-recoverable NBTI and PBTI using AC and DC stresses

Much effort continues to be devoted to the modeling of the NBTI and PBTI instabilities in MOSFETs. This paper is dedicated to linking both equations in order to extract important physical information from the basic experimental parameters Ar and Br. We will show that both NBTI and PBTI behave very similarly. They both show permanent and recoverable traps. The recovery rate is a good estimator of the amount of recoverable traps enabling to decouple smartly both kinds of traps.