A 20-Gbit/s monolithic photoreceiver using InAlAs/InGaAs HEMT´s and regrown p-i-n photodiode

Author

Spicher, J. ; Klepser, B -U H ; Beck, M. ; Rudra, A. ; Sachot, R. ; Ilegems, M.

Author_Institution

Inst. for Micro- and Optoelectron., Swiss Federal Inst. of Technol., Lausanne, Switzerland

fYear

1996

fDate

21-25 Apr 1996

Firstpage

439

Lastpage

442

Abstract

A two-step growth approach was used to monolithically integrate p-i-n InGaAs photodiodes with a InAlAs/InGaAs lattice matched to InP HEMT preamplifier. The HEMT structure was first grown by MBE and CBE was used to regrow the p-i-n structure. The use of a CVD-SiO₂ mask layer to achieve selective regrowth was found to severely degrade the underlying HEMT layers. Using a non selective regrowth method, high quality regrown material was obtained and a decrease of less than 10% was measured for the HEMT channel sheet resistance. With this integration process photoreceivers showing a bandwidth of 18 GHz were fabricated

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; monolithic integrated circuits; optical receivers; p-i-n photodiodes; preamplifiers; semiconductor epitaxial layers; semiconductor growth; 18 GHz; 20 Mbit/s; CBE; HEMT; III-V semiconductors; InAlAs-InGaAs; MBE; channel sheet resistance; monolithic photoreceiver; preamplifier; regrown p-i-n photodiode; selective regrowth; two-step growth; Degradation; Electrical resistance measurement; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; PIN photodiodes; Preamplifiers; Sheet materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on

Conference_Location

Schwabisch-Gmund

Print_ISBN

0-7803-3283-0

Type

conf

DOI

10.1109/ICIPRM.1996.492276

Filename

492276