DocumentCode :
3382562
Title :
Optically active Si surfaces
Author :
Kuznicki, Zbigniew T. ; Bigot, Jean-Yves
Author_Institution :
Photonic System Laboratory, ENSPS Pÿle API Parc d´´Innovation, Boulevard Sébastien Brant, BP 10413, 67400 Illkirch, France
fYear :
2008
fDate :
11-16 May 2008
Firstpage :
1
Lastpage :
5
Abstract :
The optoelectronics and photonics properties of silicon are fundamentally influenced by the density of carriers present near the sample surface. One way of generating very large densities of such carriers is to confine them in a Si nanolayer made by implantation followed by a suitable thermal treatment. In that way, one can photo-generate a two dimensional (2D) plasma which modifies the complex refractive index of the nanolayer.
Keywords :
Absorption; Carrier confinement; Nonlinear optics; Optical scattering; Optical surface waves; Passivation; Plasma density; Plasma measurements; Pulse measurements; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2008.4922769
Filename :
4922769
Link To Document :
بازگشت