Title :
Optically active Si surfaces
Author :
Kuznicki, Zbigniew T. ; Bigot, Jean-Yves
Author_Institution :
Photonic System Laboratory, ENSPS Pÿle API Parc d´´Innovation, Boulevard Sébastien Brant, BP 10413, 67400 Illkirch, France
Abstract :
The optoelectronics and photonics properties of silicon are fundamentally influenced by the density of carriers present near the sample surface. One way of generating very large densities of such carriers is to confine them in a Si nanolayer made by implantation followed by a suitable thermal treatment. In that way, one can photo-generate a two dimensional (2D) plasma which modifies the complex refractive index of the nanolayer.
Keywords :
Absorption; Carrier confinement; Nonlinear optics; Optical scattering; Optical surface waves; Passivation; Plasma density; Plasma measurements; Pulse measurements; Ultrafast optics;
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2008.4922769