Title : 
A thermal model for the top layer of 3D integrated circuits considering through silicon vias
         
        
            Author : 
Wang, Fengjuan ; Zhu, Zhangming ; Yang, Yintang ; Wang, Ning
         
        
            Author_Institution : 
Sch. of Microelectron., Xidian Univ., Xi´´an, China
         
        
        
        
        
        
            Abstract : 
Based on the analytical thermal model for the top layer of three-dimensional integrated circuits (3D ICs) without through silicon vias (TSVs), the corresponding analytical thermal model taking TSVs into account is proposed. TSVs density ρ and effective thermal conductivity is introduced in this paper. The simulation results show that, the temperature increases sharply with the decrease of ρ for more layers and smaller ρ, and the best range of TSVs density ρ is 0.5% to 1% for an 8-layer 3D IC. These results can be effectively used as design guidelines in 3D IC thermal management studies.
         
        
            Keywords : 
thermal conductivity; thermal management (packaging); three-dimensional integrated circuits; 3D integrated circuits; analytical thermal model; thermal conductivity; thermal management; through silicon vias; Analytical models; Integrated circuit modeling; Three dimensional displays; Thermal Model; Three-Dimensional Integrated Circuits; Through Silicon Vias density;
         
        
        
        
            Conference_Titel : 
ASIC (ASICON), 2011 IEEE 9th International Conference on
         
        
            Conference_Location : 
Xiamen
         
        
        
            Print_ISBN : 
978-1-61284-192-2
         
        
            Electronic_ISBN : 
2162-7541
         
        
        
            DOI : 
10.1109/ASICON.2011.6157281