• DocumentCode
    3382601
  • Title

    A thermal model for the top layer of 3D integrated circuits considering through silicon vias

  • Author

    Wang, Fengjuan ; Zhu, Zhangming ; Yang, Yintang ; Wang, Ning

  • Author_Institution
    Sch. of Microelectron., Xidian Univ., Xi´´an, China
  • fYear
    2011
  • fDate
    25-28 Oct. 2011
  • Firstpage
    618
  • Lastpage
    620
  • Abstract
    Based on the analytical thermal model for the top layer of three-dimensional integrated circuits (3D ICs) without through silicon vias (TSVs), the corresponding analytical thermal model taking TSVs into account is proposed. TSVs density ρ and effective thermal conductivity is introduced in this paper. The simulation results show that, the temperature increases sharply with the decrease of ρ for more layers and smaller ρ, and the best range of TSVs density ρ is 0.5% to 1% for an 8-layer 3D IC. These results can be effectively used as design guidelines in 3D IC thermal management studies.
  • Keywords
    thermal conductivity; thermal management (packaging); three-dimensional integrated circuits; 3D integrated circuits; analytical thermal model; thermal conductivity; thermal management; through silicon vias; Analytical models; Integrated circuit modeling; Three dimensional displays; Thermal Model; Three-Dimensional Integrated Circuits; Through Silicon Vias density;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2011 IEEE 9th International Conference on
  • Conference_Location
    Xiamen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-61284-192-2
  • Electronic_ISBN
    2162-7541
  • Type

    conf

  • DOI
    10.1109/ASICON.2011.6157281
  • Filename
    6157281