DocumentCode :
3382619
Title :
Novel high uniformity readout circuit allowing microbolometers to operate with low noise
Author :
Lv, Jian ; Zhou, Yun ; Liao, Baobin ; Jiang, Yadong
Author_Institution :
State key Lab. of Electron. Thin Film & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2011
fDate :
25-28 Oct. 2011
Firstpage :
621
Lastpage :
624
Abstract :
The capacitive transimpedance amplifier (CTIA) is usually taken as a preamplifier circuit for uncooled microbolometer due to it´s excellent bias control, high injection efficiency, linearity, and noise performance. However, the nonzero input offset voltage in the operational amplifier will cause a significant spatial non-uniformity. In this paper, we have developed a novel CTIA for uncooled microbolometers with correlated double sampling technique. The proposed CTIA suppresses the offset voltage and flicker noise of the op-amp. It improves the readout uniformity and also the temporal noise performance. A 320 × 240 uncooled microbolometer focal plane array based on the proposed circuit was implemented on silicon using a 0.5μm CMOS technology. A thermal IR image is, thus, obtained for F/1 optics and at 60 Hz frame rate. The test spatial fixed pattern noise voltage and temporal root mean square (RMS) noise voltage are 0.0286 V, 546μV, respectively.
Keywords :
CMOS analogue integrated circuits; bolometers; infrared imaging; operational amplifiers; readout electronics; CMOS technology; bias control; capacitive transimpedance amplifier; correlated double sampling technique; flicker noise suppression; frequency 60 Hz; injection efficiency; nonzero input offset voltage; offset voltage suppression; op-amp; operational amplifier; preamplifier circuit; readout uniformity improvement; silicon; size 0.5 mum; temporal noise performance; temporal root mean square noise voltage; test spatial fixed pattern noise voltage; thermal IR image; uncooled microbolometer focal plane array; uniformity readout circuit; voltage 0.0286 V; voltage 546 muV; Bolometers; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
ISSN :
2162-7541
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
Type :
conf
DOI :
10.1109/ASICON.2011.6157282
Filename :
6157282
Link To Document :
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