DocumentCode
3382747
Title
An efficient 90nm technology-node GHz transceiver of on-chip global interconnect
Author
Zheng, Zaixiao ; Mao, Zhigang ; Jiang, Jianfei
Author_Institution
Dept. of Microelectron., Shanghai JiaoTong Univ., Shanghai, China
fYear
2011
fDate
25-28 Oct. 2011
Firstpage
649
Lastpage
652
Abstract
Today high speed signal transmission system for on chip global interconnect requires elaborate design of the transceiver. The design goal of transceiver is to ensure the transmission obtains an improvement in latency and power, which are the two most important factors in high speed transmission. In this paper, we present an efficient structured transceiver which implements low swing technology based on the differential structure with the accurate modeling of the on chip global interconnect. And we give the principals of the structure and compare the optimized simulation results with the traditional inverter insertion method used to decrease the delay of the global interconnect. Our transceiver design is based on the 90nm CMOS technology and TSMC 90nm interconnect structure on Metal 5. The global interconnect length we focus on is the general length 10mm. Compared to repeater insertion, this system has a latency advantage of 17% and remarkable advantage in power up to 33.9%.
Keywords
high-speed integrated circuits; integrated circuit interconnections; transceivers; high speed signal transmission system; inverter insertion method; on-chip global interconnect; size 90 nm; transceiver; Conductivity; Delay; Physics; Radio access networks; Repeaters; Robustness; Transceivers; 3-D multi-level modeling; 90nm technology; Differential transmission; Low swing;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location
Xiamen
ISSN
2162-7541
Print_ISBN
978-1-61284-192-2
Electronic_ISBN
2162-7541
Type
conf
DOI
10.1109/ASICON.2011.6157289
Filename
6157289
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