Title :
Polarization-insensitive high-speed InP/InGaAsP access node space switch matrix for bidirectional optical ATM networks
Author :
Kyburz, R. ; Vogt, W. ; Krähenbühl, R. ; Bachmann, M. ; Brenner, T. ; Melchior, H.
Author_Institution :
Inst. of Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
An InP/InGaAsP optical space switch matrix with 5 polarization-insensitive Mach-Zehnder interferometers in 3 stages and with 6 inputs and 6 outputs for access network applications is reported. The switches, specially designed for a low polarization dependence and low insertion losses, typically show on-state polarization-sensitivities of less than 0.5 dB, nearly identical switching voltages of around 7 V for TE and TM polarization, insertion losses below 11 dB, on-off ratios above 15 dB and high-speed switching capabilities up to 3 Gb/s
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; asynchronous transfer mode; gallium arsenide; indium compounds; integrated optics; optical fibre losses; optical fibre polarisation; optical fibre subscriber loops; photonic switching systems; 11 dB; 3 Gbit/s; 7 V; III-V semiconductors; InP-InGaAsP; TE polarization; TM polarization; access network applications; access node space switch matrix; bidirectional optical ATM networks; insertion losses; on-off ratios; polarization dependence; polarization-insensitive Mach-Zehnder interferometers; switching voltages; High speed optical techniques; Indium phosphide; Insertion loss; Optical fiber networks; Optical interferometry; Optical losses; Optical polarization; Optical switches; Tellurium; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.492278
