DocumentCode
33828
Title
Latch-Up Protection Design With Corresponding Complementary Current to Suppress the Effect of External Current Triggers
Author
Hui-Wen Tsai ; Ming-Dou Ker
Author_Institution
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
15
Issue
2
fYear
2015
fDate
Jun-15
Firstpage
242
Lastpage
249
Abstract
The robustness against latch-up in the integrated circuits can be improved by supporting complementary current at the pad under the latch-up current test (I-test). By inserting additional junctions to form parasitic bipolar sensors, the external trigger can be monitored, and the ESD protection devices can be applied to provide such current and decrease the related perturbation to the internal circuits. The proposed design and the previous work with a single guard ring have been fabricated in the same 0.5-μm 5-V process. The experimental results confirm the enhanced latch-up tolerance of this work and the practicability in the SOC era.
Keywords
CMOS digital integrated circuits; electrostatic discharge; flip-flops; integrated circuit design; integrated circuit testing; system-on-chip; tolerance analysis; trigger circuits; ESD protection devices; SOC; complementary current; electrostatic discharge; external current trigger effect suppression; integrated circuits; latch-up current test; latch-up protection design; latch-up tolerance; parasitic bipolar sensors; size 0.5 mum; voltage 5 V; CMOS integrated circuits; Electrostatic discharges; Junctions; Layout; Materials reliability; Sensors; Latch-up; Latchup; electrostatic discharge (ESD) protection; guard ring;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2015.2424377
Filename
7089270
Link To Document