• DocumentCode
    33828
  • Title

    Latch-Up Protection Design With Corresponding Complementary Current to Suppress the Effect of External Current Triggers

  • Author

    Hui-Wen Tsai ; Ming-Dou Ker

  • Author_Institution
    Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    15
  • Issue
    2
  • fYear
    2015
  • fDate
    Jun-15
  • Firstpage
    242
  • Lastpage
    249
  • Abstract
    The robustness against latch-up in the integrated circuits can be improved by supporting complementary current at the pad under the latch-up current test (I-test). By inserting additional junctions to form parasitic bipolar sensors, the external trigger can be monitored, and the ESD protection devices can be applied to provide such current and decrease the related perturbation to the internal circuits. The proposed design and the previous work with a single guard ring have been fabricated in the same 0.5-μm 5-V process. The experimental results confirm the enhanced latch-up tolerance of this work and the practicability in the SOC era.
  • Keywords
    CMOS digital integrated circuits; electrostatic discharge; flip-flops; integrated circuit design; integrated circuit testing; system-on-chip; tolerance analysis; trigger circuits; ESD protection devices; SOC; complementary current; electrostatic discharge; external current trigger effect suppression; integrated circuits; latch-up current test; latch-up protection design; latch-up tolerance; parasitic bipolar sensors; size 0.5 mum; voltage 5 V; CMOS integrated circuits; Electrostatic discharges; Junctions; Layout; Materials reliability; Sensors; Latch-up; Latchup; electrostatic discharge (ESD) protection; guard ring;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2015.2424377
  • Filename
    7089270