Title :
A low power sub 1V 3.5-ppm/°C voltage reference featuring subthreshold MOSFETs
Author :
Shihabudheen, T. ; Babu, V. Suresh ; Baiju, M.R.
Author_Institution :
Dept. of Electron. & Commun., Coll. of Eng. Trivandrum, Trivandrum
fDate :
Aug. 31 2008-Sept. 3 2008
Abstract :
This paper proposes a new sub bandgap scalable voltage reference based on subthreshold operation of MOSFET. This low voltage low power circuit offers below 1V operation. The circuit is designed in 90nm CMOS technology with VTHn = | VTHpB | = 0.25V at 27degC using BSIM4.4 model card. The SPICE simulation results reveal that the minimum supply voltage required is only 0.7V and consumes a maximum current of 2.63muA. An average reference voltage of 254mV with a temperature coefficient of 3.5ppm/degC is achieved.
Keywords :
CMOS integrated circuits; MOSFET; CMOS technology; low power sub voltage reference; size 90 nm; sub bandgap scalable voltage reference; subthreshold MOSFET; subthreshold operation; temperature 27 degC; voltage 0.25 V; voltage 0.7 V; voltage 254 mV; CMOS technology; Circuit simulation; Fabrication; Low voltage; MOSFETs; Operational amplifiers; Photonic band gap; Power supplies; Temperature sensors; Threshold voltage;
Conference_Titel :
Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on
Conference_Location :
St. Julien´s
Print_ISBN :
978-1-4244-2181-7
Electronic_ISBN :
978-1-4244-2182-4
DOI :
10.1109/ICECS.2008.4674885
