Title :
Effects of unintended dopants on I–V characteristics of the double-gate MOSFETs, a simulation study
Author :
Li, Peicheng ; Mei, Guanghui ; Hu, Guangxi ; Liu, Ran ; Tang, Tingao
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
In this paper, we study the effects of an unintional dopant in the channel on the current-voltage characteristics of a Double Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Non-Equilibrium Green´s Function (NEGF) approach is used. A fast and efficient model to calculate the drain current is presented.
Keywords :
Green´s function methods; MOSFET; current-voltage characteristics; double-gate MOSFET; drain current; nonequilibrium Green function; MOSFET circuits; Current-Voltage Characteristics; Double Gate; MOSFET; Unintended Dopants;
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
DOI :
10.1109/ASICON.2011.6157310
