DocumentCode :
3383216
Title :
Investigations on the recombination activity of grain boundaries in MC silicon
Author :
Zuschlag, A. ; Micard, G. ; Junge, J. ; Käs, M. ; Seren, S. ; Hahn, G. ; Coletti, G. ; Jia, G. ; Seifert, W.
Author_Institution :
University of Konstanz, Department of Physics, P.O. Box X916, 78457, Germany
fYear :
2008
fDate :
11-16 May 2008
Firstpage :
1
Lastpage :
5
Abstract :
This paper focuses on the influence of the effective intra-grain minority charge carrier diffusion length and surface recombination velocity at grain boundaries on solar cell parameters. Both can be extracted in principle from Light- and Electron Beam Induced Current measurements (LBIC and EBIC). Multicrystalline floatzone (mc FZ) silicon with different grain sizes was processed to solar cells with and without hydrogenation step, followed by LBIC and EBIC characterization. A theoretical model is used which can be applied to measured LBIC or EBIC profiles in order to obtain values for the effective intra-grain diffusion length and the recombination velocity at grain boundaries. Efficiencies reached on the processed solar cells (up to 16.0%) are the highest reported so far for material with such a small grain size, and the positive effect of hydrogenation can clearly be seen. The obtained results are very useful for other cost effective small grained mc silicon materials.
Keywords :
Charge carriers; Current measurement; Electron beams; Grain boundaries; Grain size; Length measurement; Photovoltaic cells; Silicon; Spontaneous emission; Velocity measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2008.4922800
Filename :
4922800
Link To Document :
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