DocumentCode :
3383393
Title :
High-efficiency 0.8 m2 thin-film Si modules fabricated by a batch process
Author :
Krudtad, P. ; Hongsingthong, A. ; Sitthiphol, N. ; Chinnavornrungsee, A.P. ; Udomdachanut, N. ; Tachakittiroje, W. ; Piromjit, C. ; Pingate, N. ; Sichanugrist, P.
Author_Institution :
National Science and Technology Development Agency, 111 Paholyothin Rd., Klong Luang, Pathumthani 12120, Thailand
fYear :
2008
fDate :
11-16 May 2008
Firstpage :
1
Lastpage :
2
Abstract :
A large batch PECVD system has been developed in order to deposit a-Si/a-SiGe and a-Si/μc-Si solar cell on 20 pieces of SnO2-coated glass with the area of 0.8 m2. Newly designed electrode has been used in order to achieve uniform μc-Si film on 0.8 m2. Beside μc-Si nlayer, p(μc-SiO) has been used in the p-layer of the bottom cell in order to increase the module performance. Alcohol flush has been used in order to minimize the boron contamination. Furthermore, ZnO/Ag back electrode has been used instead of ZnO/Al electrode. Up to now, initial module efficiency of more than 6.5% and 7% have been achieved with a-SiO/a-Si/a-SiGe and a-Si/μc-Si cell structure.
Keywords :
Boron; Contamination; Electrodes; Glass; Photovoltaic cells; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2008.4922808
Filename :
4922808
Link To Document :
بازگشت