• DocumentCode
    3383425
  • Title

    A new approach for the fabrication of gain-coupled DFB laser diodes using focused ion beams

  • Author

    Höfling, E. ; Orth, A. ; Reithmaier, J.P. ; Forchel, A.

  • Author_Institution
    Tech. Phys., Wurzburg Univ., Germany
  • fYear
    1996
  • fDate
    13-18 Oct. 1996
  • Firstpage
    89
  • Lastpage
    90
  • Abstract
    Gain-coupled distributed feedback (DFB) quantum well laser diodes have been made by focused ion beam implantation and subsequent thermal annealing. The uncoated laser devices show single longitudinal mode emission with very high yield.
  • Keywords
    distributed feedback lasers; focused ion beam technology; laser modes; optical couplers; optical fabrication; quantum well lasers; semiconductor technology; waveguide lasers; focused ion beam implantation; focused ion beams; gain-coupled DFB laser diode fabrication; gain-coupled distributed feedback quantum well laser diodes; single longitudinal mode emission; subsequent thermal annealing; uncoated laser devices; very high yield; Annealing; Diode lasers; Distributed feedback devices; Fiber lasers; Gratings; Ion beams; Laser feedback; Laser modes; Optical device fabrication; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1996., 15th IEEE International
  • Conference_Location
    Haifa, Israel
  • Print_ISBN
    0-7803-3163-X
  • Type

    conf

  • DOI
    10.1109/ISLC.1996.553761
  • Filename
    553761
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3383425