• DocumentCode
    3383432
  • Title

    Analyses of a COOL-MOSFET

  • Author

    Spuiber, O. ; De Souza, M.M. ; Narayanan, E.M.S. ; Krishnan, S.

  • Author_Institution
    Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    131
  • Abstract
    The recent introduction of the COOLMOS device has demonstrated the possibility of a new realm of vertical power devices with significantly reduced on-resistance. In this paper, a detailed analysis of the on-state performance and breakdown voltage of the COOLMOS is presented
  • Keywords
    power MOSFET; semiconductor device breakdown; COOL-MOSFET; breakdown voltage; on-resistance; vertical power device; Avalanche breakdown; Breakdown voltage; Doping; Electric breakdown; Immune system; MOSFETs; P-n junctions; Power electronics; Switching circuits; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-5139-8
  • Type

    conf

  • DOI
    10.1109/SMICND.1999.810446
  • Filename
    810446
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3383432