• DocumentCode
    3383461
  • Title

    Simulation of carrier transport in quantum cascade lasers

  • Author

    Li, Yingying ; Ru, Guo-Ping ; Li, Z. -M Simon

  • Author_Institution
    Dept. of Microelectron., Fudan Univ., Shanghai, China
  • fYear
    2011
  • fDate
    25-28 Oct. 2011
  • Firstpage
    796
  • Lastpage
    799
  • Abstract
    We report a simulation study of carrier transport in quantum cascade lasers (QCLs) based on non-local transport model. In this model, drift-diffusion equations are solved with modification of current density by accounting for long-range carrier transport including quantum tunneling and hot carrier transport in the device. From the simulation results of an AlInGaAs/InP QCL at different temperatures, it is found that our model shows reasonable agreement with experiments at lower temperature when carriers are well confined while substantial deviation is observed at higher temperatures when the leakage of carriers into the continuum is significant.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium arsenide; hot carriers; indium compounds; quantum cascade lasers; AlInGaAs-InP; QCL; current density; drift-diffusion equations; hot carrier transport; nonlocal transport model; quantum cascade lasers; quantum tunneling; Photodetectors; Quantum cascade lasers; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2011 IEEE 9th International Conference on
  • Conference_Location
    Xiamen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-61284-192-2
  • Electronic_ISBN
    2162-7541
  • Type

    conf

  • DOI
    10.1109/ASICON.2011.6157325
  • Filename
    6157325