DocumentCode
3383461
Title
Simulation of carrier transport in quantum cascade lasers
Author
Li, Yingying ; Ru, Guo-Ping ; Li, Z. -M Simon
Author_Institution
Dept. of Microelectron., Fudan Univ., Shanghai, China
fYear
2011
fDate
25-28 Oct. 2011
Firstpage
796
Lastpage
799
Abstract
We report a simulation study of carrier transport in quantum cascade lasers (QCLs) based on non-local transport model. In this model, drift-diffusion equations are solved with modification of current density by accounting for long-range carrier transport including quantum tunneling and hot carrier transport in the device. From the simulation results of an AlInGaAs/InP QCL at different temperatures, it is found that our model shows reasonable agreement with experiments at lower temperature when carriers are well confined while substantial deviation is observed at higher temperatures when the leakage of carriers into the continuum is significant.
Keywords
III-V semiconductors; aluminium compounds; current density; gallium arsenide; hot carriers; indium compounds; quantum cascade lasers; AlInGaAs-InP; QCL; current density; drift-diffusion equations; hot carrier transport; nonlocal transport model; quantum cascade lasers; quantum tunneling; Photodetectors; Quantum cascade lasers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location
Xiamen
ISSN
2162-7541
Print_ISBN
978-1-61284-192-2
Electronic_ISBN
2162-7541
Type
conf
DOI
10.1109/ASICON.2011.6157325
Filename
6157325
Link To Document