Title :
Electrical stress in N- and P-channel undoped-hydrogenated polysilicon thin film transistors (TFTs)
Author :
Farmakis, F.V. ; Brini, J. ; Kamarinos, G. ; Dimitriadis, C.A. ; Gueorguiev, V.T. ; Ivanov, Tz.E.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
We applied electrical stress in P- and N-channel polysilicon thin film transistors. N-channel devices exhibit two-step degradation with hot-hole injection into the gate oxide followed by electron injection. Stress in P-channel devices provides interesting results in order to clarify the physical mechanisms occurring during device aging
Keywords :
ageing; elemental semiconductors; hot carriers; hydrogen; silicon; thin film transistors; N-channel device; P-channel device; Si:H; aging; device degradation; electrical stress; electron injection; gate oxide; hot hole injection; photon emission; polysilicon TFT; undoped-hydrogenated polysilicon thin film transistor; Active matrix liquid crystal displays; Degradation; Electrons; Hot carriers; Linear predictive coding; Physics; Silicon; Stress; Thin film transistors; Threshold voltage;
Conference_Titel :
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-5139-8
DOI :
10.1109/SMICND.1999.810452
