• DocumentCode
    3383616
  • Title

    A new low power symmetric folded cascode amplifier by recycling current in 65nm CMOS technology

  • Author

    Zhao, Xiao ; Fang, Huajun ; Xu, Jun

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • fYear
    2011
  • fDate
    25-28 Oct. 2011
  • Firstpage
    820
  • Lastpage
    823
  • Abstract
    A new low power symmetric folded cascode amplifier is presented. The proposed amplifier delivers the same performance as that of the conventional symmetric folded cascode amplifier while consuming only 50% the power. This is achieved by recycling the bias current of idle devices, which results in an enhanced transconductance, gain and slew rate. The proposed amplifier was implemented in SMIC standard 65nm CMOS process. Simulation results show that the proposed amplifier achieves almost twice the bandwidth (313.4MHz versus 158.2MHz), 8.2dB DC gain enhancement (63.4dB versus 55.2dB) and better than twice the slew rate (45.6V/us versus 20.5V/us) compared to the conventional symmetric folded cascode amplifier with the same power. On the other hand, the power consumption of the proposed amplifier can reduce 50% compared to the conventional symmetric folded cascode amplifier with the same performance.
  • Keywords
    CMOS analogue integrated circuits; amplifiers; integrated circuit design; low-power electronics; nanotechnology; CMOS technology; DC gain enhancement; SMIC standard CMOS process; bandwidth 158.2 MHz; bandwidth 313.4 MHz; current recycling; low power symmetric folded cascode amplifier; size 65 nm; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2011 IEEE 9th International Conference on
  • Conference_Location
    Xiamen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-61284-192-2
  • Electronic_ISBN
    2162-7541
  • Type

    conf

  • DOI
    10.1109/ASICON.2011.6157331
  • Filename
    6157331