A nearly ideal SiC Schottky barrier device edge termination

Author

Brezeanu, G. ; Badila, M. ; Millan, J. ; Godignon, Ph. ; Locatelli, Marie Laure ; Chante, J.P. ; Lebedev, A. ; Dilimot, G. ; Enache, I. ; Bica, G. ; Banu, V.

Author_Institution

Univ. Politehnica Bucharest, Romania

Volume

1

fYear

1999

fDate

1999

Firstpage

183

Abstract

A simple edge termination based on oxide ramp profile around the Schottky contact is used on a Ni Schottky rectifier fabricated on a 2.7×10¹⁶ n-type 6H-SiC epilayer. Three anneals of the Schottky contacts were studied experimentally. The diodes annealed at 900°C showed excellent reverse characteristics with a nearly ideal breakdown at about 800 V. Forward characteristics followed thermionic emission theory with ideality factor nearly one

Keywords

Schottky barriers; Schottky diodes; annealing; high-temperature electronics; nickel; power semiconductor diodes; semiconductor device breakdown; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 800 V; 900 C; Ni Schottky rectifier; Schottky contact annealing; SiC-Ni; edge termination; forward characteristics; high voltage high temperature operation; ideality factor; n-type 6H-SiC epilayer; nearly ideal SiC Schottky barrier device edge termination; nearly ideal breakdown; oxide ramp profile; reverse characteristics; thermionic emission theory; Annealing; Breakdown voltage; Electric breakdown; Gallium arsenide; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor materials; Silicon carbide; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810458

Filename

810458