Title :
Electro-thermal model extraction of power GaN HEMT using I–V pulsed and DC measurements
Author :
Hu, Zhifu ; Gao, Xuebang ; Cai, Shujun
Author_Institution :
Hebei Semicond. Res. Inst., Shijiazhuang, China
Abstract :
A multiple-pole electro-thermal equivalent subcircuit model of power GaN HEMT is proposed. A quick and reliable electrical approach for direct extraction of thermal resistances and thermal capacitances is presented. Good agreement between measured and simulated I-V characteristics with thermal effect validates the electro-thermal model.
Keywords :
III-V semiconductors; equivalent circuits; gallium compounds; power HEMT; power semiconductor devices; semiconductor device models; wide band gap semiconductors; DC measurements; HEMT; I-V pulsed measurements; electro-thermal model; multiple-pole electro-thermal equivalent subcircuit model; thermal capacitances direct extraction; thermal resistances direct extraction; Gallium nitride; HEMTs; Heating; Power measurement; Pulse measurements; Radio access networks; Temperature measurement;
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
DOI :
10.1109/ASICON.2011.6157338
