DocumentCode
3383790
Title
Enhanced modulation bandwidth and self-pulsations in detuned loaded InGaAsP DBR-lasers
Author
Schatz, R. ; Kjebon, O. ; Lourdudoss, S. ; Nilsson, S. ; Stålnacke, B.
Author_Institution
Lab. of Photonics & Microwave Eng., R. Inst. of Technol., Stockholm, Sweden
fYear
1996
fDate
13-18 Oct. 1996
Firstpage
93
Lastpage
94
Abstract
A strong undamping of the relaxation peak leading to self-pulsations and a record high modulation bandwidth (26 GHz) were observed in 1.55 /spl mu/m InGaAsP DBR QW lasers. These results are attributed to the mechanism of detuned loading.
Keywords
III-V semiconductors; distributed Bragg reflector lasers; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; laser tuning; quantum well lasers; /spl mu/m InGaAsP DBR lasers; 1.55 mum; 26 GHz; InGaAsP; detuned loaded InGaAsP DBR-lasers; detuned loading; enhanced modulation bandwidth; high modulation bandwidth; quantum well lasers; relaxation peak; self-pulsations; strong undamping; Bandwidth; Chirp modulation; Damping; Detectors; Dispersion; Frequency; Masers; Optical interconnections; Optical modulation; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location
Haifa, Israel
Print_ISBN
0-7803-3163-X
Type
conf
DOI
10.1109/ISLC.1996.553763
Filename
553763
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