• DocumentCode
    3383909
  • Title

    Light-Induced Degradation in Multicrystalline Silicon Solar Cells Made of Metallurgical Grade Silicon

  • Author

    Ren, Xianpei ; Chen, Chao ; Cheng, Haoran ; He, Falin

  • Author_Institution
    Sch. of Energy Res., Xiamen Univ., Xiamen, China
  • fYear
    2012
  • fDate
    27-29 March 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This study focuses on the evolution under illumination of the efficiency of multicrystalline silicon solar cells made of metallurgical grade silicon. First, we calculated the activation energy of BOi2 defect generation and annihilation from efficiency measurements and compared with previous values deterimined by Minority carrier lifetime and open-circuit voltage measurements, the results are much consistent. Then we shown via external quantum efficiency measurements that this material is sensitive to light-induced degradation effects due to the formation of BOi2 defects and the dissociation of iron-boron pairs, and the former is the major fator. Finally, we discussed how to reduce the light-induced degradation.
  • Keywords
    carrier lifetime; elemental semiconductors; minority carriers; silicon; solar cells; Si; activation energy; annihilation; defect generation; efficiency measurements; external quantum efficiency measurement; iron-boron pair dissociation; light-induced degradation effect; metallurgical grade silicon; minority carrier lifetime; multicrystalline silicon solar cells; open-circuit voltage measurement; Degradation; Energy measurement; Lighting; Photovoltaic cells; Pollution measurement; Silicon; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power and Energy Engineering Conference (APPEEC), 2012 Asia-Pacific
  • Conference_Location
    Shanghai
  • ISSN
    2157-4839
  • Print_ISBN
    978-1-4577-0545-8
  • Type

    conf

  • DOI
    10.1109/APPEEC.2012.6306911
  • Filename
    6306911