DocumentCode
3383909
Title
Light-Induced Degradation in Multicrystalline Silicon Solar Cells Made of Metallurgical Grade Silicon
Author
Ren, Xianpei ; Chen, Chao ; Cheng, Haoran ; He, Falin
Author_Institution
Sch. of Energy Res., Xiamen Univ., Xiamen, China
fYear
2012
fDate
27-29 March 2012
Firstpage
1
Lastpage
4
Abstract
This study focuses on the evolution under illumination of the efficiency of multicrystalline silicon solar cells made of metallurgical grade silicon. First, we calculated the activation energy of BOi2 defect generation and annihilation from efficiency measurements and compared with previous values deterimined by Minority carrier lifetime and open-circuit voltage measurements, the results are much consistent. Then we shown via external quantum efficiency measurements that this material is sensitive to light-induced degradation effects due to the formation of BOi2 defects and the dissociation of iron-boron pairs, and the former is the major fator. Finally, we discussed how to reduce the light-induced degradation.
Keywords
carrier lifetime; elemental semiconductors; minority carriers; silicon; solar cells; Si; activation energy; annihilation; defect generation; efficiency measurements; external quantum efficiency measurement; iron-boron pair dissociation; light-induced degradation effect; metallurgical grade silicon; minority carrier lifetime; multicrystalline silicon solar cells; open-circuit voltage measurement; Degradation; Energy measurement; Lighting; Photovoltaic cells; Pollution measurement; Silicon; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Power and Energy Engineering Conference (APPEEC), 2012 Asia-Pacific
Conference_Location
Shanghai
ISSN
2157-4839
Print_ISBN
978-1-4577-0545-8
Type
conf
DOI
10.1109/APPEEC.2012.6306911
Filename
6306911
Link To Document