• DocumentCode
    3383925
  • Title

    A CMOS Sub-l-V nanopower current and voltage reference with leakage compensation

  • Author

    Huang, Zhangcai ; Luo, Qin ; Inoue, Yasuaki

  • Author_Institution
    Fukuoka Ind., Sci. & Technol. Found. (Fukuoka IST), Fukuoka, Japan
  • fYear
    2010
  • fDate
    May 30 2010-June 2 2010
  • Firstpage
    4069
  • Lastpage
    4072
  • Abstract
    In this paper, a CMOS sub-1-V nanopower reference is proposed, which is implemented without resistors and with only standard CMOS transistors. The proposed circuit has the most attractive merit that it can afford reference current and reference voltage simultaneously. Moreover, the leakage compensation technique is utilized, and thus it has very low temperature coefficient for a wide temperature range. The proposed circuit is verified by SPICE simulation with CMOS 0.18um process. The temperature coefficient of the reference voltage and reference current are 0.0037%/°C and 0.0091%/°C, respectively. Also, the power supply voltage can be as low as 0.85V and its power consumption is only 5.1nW.
  • Keywords
    CMOS integrated circuits; integrated circuit modelling; leakage currents; low-power electronics; transistors; CMOS nanopower current; CMOS transistors; SPICE simulation; leakage compensation technique; power 5.1 nW; reference current; reference voltage; size 0.18 mum; voltage 1 V; CMOS process; CMOS technology; Circuits; Energy consumption; MOSFETs; Power supplies; Resistors; Temperature distribution; Very large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-5308-5
  • Electronic_ISBN
    978-1-4244-5309-2
  • Type

    conf

  • DOI
    10.1109/ISCAS.2010.5537636
  • Filename
    5537636