Title :
A 0.6 ppm/°C current-mode bandgap with second-order temperature compensation
Author :
Li, Yilei ; Wang, Yu ; Yan, Na ; Tan, Xi ; Min, Hao
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
A novel current-mode bandgap reference (BGR) with second-order temperature compensation is presented. The proposed bandgap reference adopts a novel structure, which takes advantage of the complementarity of second-order temperature coefficients of triodes and subthreshold MOSFETs to provide an output with second-order temperature compensation. The bandgap reference is implemented in SMIC 0.18μm RF technology, and simulation results show that it can provide the output voltage of 510 mV with temperature coefficient of 0.6 ppm/°C over the temperature range of -20°C ~ 80°C.
Keywords :
MOSFET; energy gap; SMIC RF technology; current-mode bandgap reference; second-order temperature coefficients; second-order temperature compensation; size 0.18 mum; subthreshold MOSFET; temperature -20 degC to 80 degC; triodes MOSFET; voltage 510 mV; CMOS integrated circuits; CMOS technology; Jacobian matrices; Logic gates; MOSFET circuits; Photonic band gap; Radio frequency;
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
DOI :
10.1109/ASICON.2011.6157348
