A design procedure of predictive RF MOSFET model for compatibility with ITRS

A design procedure for generating predictive MOS-FET models is proposed. Due to evolving nature of future prediction, predictive models based on a certain prediction soon become absolute. We have therefore developed a design procedure for maintaining compatibility with most up-to-date prediction such as ITRS. The design procedure can generate predictive RF models for the first time. Details of the design procedure for BSIM4 as a core model are explained, with an application to LNA design example.