Title : 
Apparatus for studying ultrasmall contacts
         
        
            Author : 
Beale, J.P. ; Pease, R.F.W.
         
        
            Author_Institution : 
Stanford Univ., CA, USA
         
        
        
        
        
        
            Abstract : 
On-chip IC dimensions have been scaled down without a corresponding decrease in the size of off-chip interconnects, including pressure contacts. As the number of I/O lines increases, pressure contacts need to operate at low forces. The use of scanning tunneling microscope/atomic force microscope (STM/AFM) technology (treating an STM tip-sample junction either as a model for an ultrasmall contact per se, or a microscopic element of a larger contact) is investigated. A combined AFM/STM has been built to allow electrical characterization of contacts under a range of forces and tip and substrate materials. The contact force can be varied from 10/sup -6/ to 10/sup -9/ N, and contact dimensions (as determined by SEM) are approximately 100-nm in diameter. Initial results demonstrate that the reversibility of a contact depends on the hardness of the contact materials.<>
         
        
            Keywords : 
atomic force microscopy; contact resistance; diameter measurement; electric resistance measurement; electrical contacts; scanning electron microscopy; scanning tunnelling microscopy; 100 nm; SEM; STM tip-sample junction; STM-AFM technology; contact dimensions; contact force; contact resistance; hardness; off-chip interconnects; on-chip IC dimensions; pressure contacts; scanning tunneling microscope/atomic force microscope; substrate materials; tip materials; ultrasmall contacts; Atomic force microscopy; Atomic measurements; Contact resistance; Diode lasers; Electrical resistance measurement; Force measurement; Instruments; Scanning electron microscopy; Surface resistance; Tunneling;
         
        
        
        
            Conference_Titel : 
Electrical Contacts, 1992., Proceedings of the Thirty-Eighth IEEE Holm Conference on
         
        
            Conference_Location : 
Philadelphia, PA, USA
         
        
            Print_ISBN : 
0-7803-0576-0
         
        
        
            DOI : 
10.1109/HOLM.1992.246935