Title :
Very low threshold current density for pseudomorphic quaternary AlInGaAs single quantum well lasers using a growth parameters optimization technique
Author :
Gilor, Joseph ; Blumin, Marina ; Samid, Llan ; Fekete, Dan
Author_Institution :
Dept. of Phys., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
A very low 82.5 A/cm/sup 2/ pulsed threshold current density was achieved for a quaternary AlInGaAs single quantum well laser, using a novel growth parameter optimization process employing a quaternary quantum wells line width broadening model.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; optimisation; quantum well lasers; semiconductor device models; semiconductor growth; spectral line broadening; vapour phase epitaxial growth; AlInGaAs; AlInGaAs single quantum well lasers; growth parameter optimization process; growth parameters optimization technique; pseudomorphic quaternary; pulsed threshold current density; quaternary quantum wells line width broadening model; very low threshold current density; Chemical lasers; Laser modes; Laser theory; Pulsed laser deposition; Pump lasers; Quantum well lasers; Semiconductor diodes; Semiconductor lasers; Solid lasers; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553764
