Title :
Metallurgical analysis of electrical breakdown for Cu-Te system contact materials in vacuum
Author :
Qiu, Chengfeng ; Wei, Shiping ; Yang, Zhimao ; Zhang, Jingchao ; Ding, Bingjun ; Wang, Xiaotian
Author_Institution :
Dept. of Mater. Sci. & Eng., Xi´´an Jiaotong Univ., China
Abstract :
Cu-Te contact materials with different compositions and microstructures are investigated for their difference in breakdown field strength by connecting a 6-kV DC voltage source to a vacuum gap. The influence of Se, Te and Fe (which are doped during metallurgical processes) on breakdown behavior is discussed. It is found that when the number of breakdowns increase, the voltage stress of CuTe, CuTeSe, and CuTeSeFe alloys should increase and the Te content on the surfaces of all alloys is reduced. Scanning electron microscopy (SEM) and composition analysis show that the initial breakdowns occur for low-melting components, such as Cu/sub 2/Te, Cu/sub 2/Se, and Cu/sub 2/(Te, Se). The voltage withstand stress of low-melting components determines the breakdown of alloys.<>
Keywords :
Auger effect; copper alloys; crystal microstructure; electric breakdown of solids; electric strength; electrical contacts; scanning electron microscope examination of materials; selenium alloys; surface structure; tellurium alloys; 6 kV; Auger energy spectrum; CuTe; CuTeSe; CuTeSeFe alloys; DC voltage source; SEM; breakdown field strength; composition analysis; contact materials; low-melting components; metallurgical processes; microstructures; scanning electron microscopy; surface composition; vacuum gap; voltage withstand stress; Breakdown voltage; Composite materials; Contacts; Electric breakdown; Joining processes; Microstructure; Scanning electron microscopy; Stress; Tellurium; Vacuum breakdown;
Conference_Titel :
Electrical Contacts, 1992., Proceedings of the Thirty-Eighth IEEE Holm Conference on
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-0576-0
DOI :
10.1109/HOLM.1992.246937
