• DocumentCode
    3384035
  • Title

    Metallurgical analysis of electrical breakdown for Cu-Te system contact materials in vacuum

  • Author

    Qiu, Chengfeng ; Wei, Shiping ; Yang, Zhimao ; Zhang, Jingchao ; Ding, Bingjun ; Wang, Xiaotian

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Xi´´an Jiaotong Univ., China
  • fYear
    1992
  • fDate
    18-21 Oct. 1992
  • Firstpage
    35
  • Lastpage
    38
  • Abstract
    Cu-Te contact materials with different compositions and microstructures are investigated for their difference in breakdown field strength by connecting a 6-kV DC voltage source to a vacuum gap. The influence of Se, Te and Fe (which are doped during metallurgical processes) on breakdown behavior is discussed. It is found that when the number of breakdowns increase, the voltage stress of CuTe, CuTeSe, and CuTeSeFe alloys should increase and the Te content on the surfaces of all alloys is reduced. Scanning electron microscopy (SEM) and composition analysis show that the initial breakdowns occur for low-melting components, such as Cu/sub 2/Te, Cu/sub 2/Se, and Cu/sub 2/(Te, Se). The voltage withstand stress of low-melting components determines the breakdown of alloys.<>
  • Keywords
    Auger effect; copper alloys; crystal microstructure; electric breakdown of solids; electric strength; electrical contacts; scanning electron microscope examination of materials; selenium alloys; surface structure; tellurium alloys; 6 kV; Auger energy spectrum; CuTe; CuTeSe; CuTeSeFe alloys; DC voltage source; SEM; breakdown field strength; composition analysis; contact materials; low-melting components; metallurgical processes; microstructures; scanning electron microscopy; surface composition; vacuum gap; voltage withstand stress; Breakdown voltage; Composite materials; Contacts; Electric breakdown; Joining processes; Microstructure; Scanning electron microscopy; Stress; Tellurium; Vacuum breakdown;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Contacts, 1992., Proceedings of the Thirty-Eighth IEEE Holm Conference on
  • Conference_Location
    Philadelphia, PA, USA
  • Print_ISBN
    0-7803-0576-0
  • Type

    conf

  • DOI
    10.1109/HOLM.1992.246937
  • Filename
    246937