DocumentCode
3384169
Title
Excellent power-generating properties by using the HIT structure
Author
Ide, Daisuke ; Taguchi, Mikio ; Yoshimine, Yukihiro ; Baba, Toshiaki ; Kinoshita, Toshihiro ; Kanno, Hiroshi ; Sakata, Hitoshi ; Maruyama, Eiji ; Tanaka, Makoto
Author_Institution
Advanced Energy Research Center, SANYO Electric Co., Ltd., Japan
fYear
2008
fDate
11-16 May 2008
Firstpage
1
Lastpage
5
Abstract
We are developing HIT solar cells with high conversion efficiency, which was achieved the world´s highest conversion efficiency of 22.3% in a practical size solar cell in July 2007. We have four main approaches to reducing power-generating cost: improve the conversion efficiency, apply the HIT structure to a thin wafer, improve the temperature coefficient, and apply HIT solar cells to a bifacial solar module. Using these approaches, we have achieved the remarkably high conversion efficiency of 21.4% due to a high Voc of 0.739 V with an 85-μm cell, which was measured at SANYO. A thinner Si wafer brings not only high Voc but also generating more output power at high temperature for a better temperature coefficient. We have confirmed that the HIT structure is suitable for use in thinner wafers, allowing us to reduce power-generating cost.
Keywords
Amorphous silicon; Commercialization; Costs; Electrodes; Heterojunctions; Photovoltaic cells; Power generation; Production; Solar power generation; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location
San Diego, CA, USA
ISSN
0160-8371
Print_ISBN
978-1-4244-1640-0
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2008.4922849
Filename
4922849
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