• DocumentCode
    3384169
  • Title

    Excellent power-generating properties by using the HIT structure

  • Author

    Ide, Daisuke ; Taguchi, Mikio ; Yoshimine, Yukihiro ; Baba, Toshiaki ; Kinoshita, Toshihiro ; Kanno, Hiroshi ; Sakata, Hitoshi ; Maruyama, Eiji ; Tanaka, Makoto

  • Author_Institution
    Advanced Energy Research Center, SANYO Electric Co., Ltd., Japan
  • fYear
    2008
  • fDate
    11-16 May 2008
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    We are developing HIT solar cells with high conversion efficiency, which was achieved the world´s highest conversion efficiency of 22.3% in a practical size solar cell in July 2007. We have four main approaches to reducing power-generating cost: improve the conversion efficiency, apply the HIT structure to a thin wafer, improve the temperature coefficient, and apply HIT solar cells to a bifacial solar module. Using these approaches, we have achieved the remarkably high conversion efficiency of 21.4% due to a high Voc of 0.739 V with an 85-μm cell, which was measured at SANYO. A thinner Si wafer brings not only high Voc but also generating more output power at high temperature for a better temperature coefficient. We have confirmed that the HIT structure is suitable for use in thinner wafers, allowing us to reduce power-generating cost.
  • Keywords
    Amorphous silicon; Commercialization; Costs; Electrodes; Heterojunctions; Photovoltaic cells; Power generation; Production; Solar power generation; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-1640-0
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2008.4922849
  • Filename
    4922849