• DocumentCode
    3384185
  • Title

    A high linearity MOS capacitor for low voltage applications

  • Author

    Yin, Shujuan

  • Author_Institution
    Coll. of Sci., Beijing Inf. Sci. & Technol. Univ., Beijing, China
  • fYear
    2011
  • fDate
    25-28 Oct. 2011
  • Firstpage
    922
  • Lastpage
    924
  • Abstract
    MOS capacitor with high linearity is proposed in this paper, which approves excellent voltage dependence and temperature-dependence. The capacitor achieves a density of 0.52fF/μm2 and a temperature-dependence coefficient of 0.096ppm/C, voltage-dependence square coefficient of 57.2ppm/V. A analog to digital modulator in SMIC 0.18μm logic technology is designed with this capacitor, which achieves 16bits resolution with 1.2V supply voltage. This MOS capacitor is approved to be good choice in mixed signal designs in SOC, which allows the whole chip to be realized in standard logic technology.
  • Keywords
    MOS capacitors; analogue-digital conversion; low-power electronics; analog to digital modulator; high linearity MOS capacitor; low voltage application; size 0.18 mum; standard logic technology; temperature-dependence coefficient; voltage 1.2 V; voltage-dependence square coefficient; Capacitors; MOS devices; Switches; MOS capacitor; linearity; low voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ASIC (ASICON), 2011 IEEE 9th International Conference on
  • Conference_Location
    Xiamen
  • ISSN
    2162-7541
  • Print_ISBN
    978-1-61284-192-2
  • Electronic_ISBN
    2162-7541
  • Type

    conf

  • DOI
    10.1109/ASICON.2011.6157356
  • Filename
    6157356