DocumentCode
3384185
Title
A high linearity MOS capacitor for low voltage applications
Author
Yin, Shujuan
Author_Institution
Coll. of Sci., Beijing Inf. Sci. & Technol. Univ., Beijing, China
fYear
2011
fDate
25-28 Oct. 2011
Firstpage
922
Lastpage
924
Abstract
MOS capacitor with high linearity is proposed in this paper, which approves excellent voltage dependence and temperature-dependence. The capacitor achieves a density of 0.52fF/μm2 and a temperature-dependence coefficient of 0.096ppm/C, voltage-dependence square coefficient of 57.2ppm/V. A analog to digital modulator in SMIC 0.18μm logic technology is designed with this capacitor, which achieves 16bits resolution with 1.2V supply voltage. This MOS capacitor is approved to be good choice in mixed signal designs in SOC, which allows the whole chip to be realized in standard logic technology.
Keywords
MOS capacitors; analogue-digital conversion; low-power electronics; analog to digital modulator; high linearity MOS capacitor; low voltage application; size 0.18 mum; standard logic technology; temperature-dependence coefficient; voltage 1.2 V; voltage-dependence square coefficient; Capacitors; MOS devices; Switches; MOS capacitor; linearity; low voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location
Xiamen
ISSN
2162-7541
Print_ISBN
978-1-61284-192-2
Electronic_ISBN
2162-7541
Type
conf
DOI
10.1109/ASICON.2011.6157356
Filename
6157356
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