Title :
A high linearity MOS capacitor for low voltage applications
Author_Institution :
Coll. of Sci., Beijing Inf. Sci. & Technol. Univ., Beijing, China
Abstract :
MOS capacitor with high linearity is proposed in this paper, which approves excellent voltage dependence and temperature-dependence. The capacitor achieves a density of 0.52fF/μm2 and a temperature-dependence coefficient of 0.096ppm/C, voltage-dependence square coefficient of 57.2ppm/V. A analog to digital modulator in SMIC 0.18μm logic technology is designed with this capacitor, which achieves 16bits resolution with 1.2V supply voltage. This MOS capacitor is approved to be good choice in mixed signal designs in SOC, which allows the whole chip to be realized in standard logic technology.
Keywords :
MOS capacitors; analogue-digital conversion; low-power electronics; analog to digital modulator; high linearity MOS capacitor; low voltage application; size 0.18 mum; standard logic technology; temperature-dependence coefficient; voltage 1.2 V; voltage-dependence square coefficient; Capacitors; MOS devices; Switches; MOS capacitor; linearity; low voltage;
Conference_Titel :
ASIC (ASICON), 2011 IEEE 9th International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-61284-192-2
Electronic_ISBN :
2162-7541
DOI :
10.1109/ASICON.2011.6157356
