Title :
Fabrication of GaAsN homo-junction solar cells by chemical beam epitaxy
Author :
Suzuki, H. ; Nishimura, K. ; Hashiguchi, T. ; Saito, K. ; Balasubramanian, B. ; Yamamoto, S. ; Inagaki, M. ; Ohshita, Y. ; Kojima, N. ; Yamaguchi, M.
Author_Institution :
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, 468-8511 Japan
Abstract :
The reduction of residual acceptors in GaAsN films and the improvement of GaAsN crystal quality evidenced by hole mobility and PL intensity were reported. Si doping using a SiH4 gas was also studied. Based on these results GaAsN homo-junction solar cells were fabricated by CBE at the first time. The short circuit current, open circuit voltage, fill factor and conversion efficiency of the GaAsN solar cell are 8.99 mA/cm2, 0.48 V, 0.43, and 1.93 %, respectively.
Keywords :
Chemicals; Epitaxial growth; Fabrication; Molecular beam epitaxial growth; Photovoltaic cells;
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2008.4922852
