A high-speed fully integrated optical receiver in standard 130nm CMOS

Author

Tavernier, Filip ; Steyaert, Michiel

Author_Institution

ESAT-MICAS, K.U. Leuven, Leuven

fYear

2008

fDate

Aug. 31 2008-Sept. 3 2008

Firstpage

806

Lastpage

809

Abstract

In this paper the design and measurement of a high-speed optical receiver, completely integrated in a standard 130 nm CMOS technology, is described. The low optical bandwidth of the integrated photodiode has been alleviated with a differential photodiode topology and an optimized equalizer. The photodiode has a large parasitic capacitance of 1 pF at each of its outputs and a responsivity of 3.4 mA/W. A TIA with a high ZBW of 75.3 THz enables fast operation which is verified by measurements. For a modulated optical input power of -3 dBm, measurements show that bitrates up to 2.4 Gbit/s and 2.7 Gbit/s can be received for a BER of 1.5 middot 10^-12 and 1.85 middot 10^-9 respectively. The current consumption of the complete receiver is 187 mA for a supply voltage of 1.2 V.

Keywords

CMOS integrated circuits; equalisers; integrated optoelectronics; optical receivers; photodiodes; CMOS; differential photodiode topology; frequency 75.3 THz; fully integrated optical receiver; high-speed optical receiver; integrated photodiode; low optical bandwidth; optimized equalizer; parasitic capacitance; size 130 nm; voltage 1.2 V; Bandwidth; CMOS technology; High speed optical techniques; Integrated optics; Measurement standards; Optical design; Optical modulation; Optical receivers; Photodiodes; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on

Conference_Location

St. Julien´s

Print_ISBN

978-1-4244-2181-7

Electronic_ISBN

978-1-4244-2182-4

Type

conf

DOI

10.1109/ICECS.2008.4674976

Filename

4674976