Title :
Silicon nanowire photovoltaics
Author :
Tham, D. ; Heath, J.R.
Author_Institution :
Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, 91125, USA
Abstract :
Arrays of hundreds of parallel silicon nanowire p-n junction diodes, 20 nm in diameter and separated from each other by 14 nm, were fabricated using a variant of nanoimprint lithography. Bulk film diodes were also fabricated adjacent to the arrays as controls. Dark I–V curves from the nanowire arrays and bulk films suggest that performance is currently limited by surface states.
Keywords :
Costs; Diodes; Hot carriers; Lattices; Optical scattering; Particle scattering; Phonons; Photonic band gap; Photovoltaic cells; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2008.4922863
