DocumentCode
3384518
Title
Silicon nanowire photovoltaics
Author
Tham, D. ; Heath, J.R.
Author_Institution
Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, 91125, USA
fYear
2008
fDate
11-16 May 2008
Firstpage
1
Lastpage
4
Abstract
Arrays of hundreds of parallel silicon nanowire p-n junction diodes, 20 nm in diameter and separated from each other by 14 nm, were fabricated using a variant of nanoimprint lithography. Bulk film diodes were also fabricated adjacent to the arrays as controls. Dark I–V curves from the nanowire arrays and bulk films suggest that performance is currently limited by surface states.
Keywords
Costs; Diodes; Hot carriers; Lattices; Optical scattering; Particle scattering; Phonons; Photonic band gap; Photovoltaic cells; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location
San Diego, CA, USA
ISSN
0160-8371
Print_ISBN
978-1-4244-1640-0
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2008.4922863
Filename
4922863
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