Mg-doping and n+-p junction formation in MOVPE-grown InxGa1-xN (x∼0.4)

Mg-doping and n⁺-p junction formation of MOVPE-grown InxGa1-xN (x∼0.4) have been studied. InGaN films with an In content up to 0.37 are successfully grown without both phase separation and metallic In segregation. By doing with Mg using CP2Mg, InGaN films with an In content up to 0.23 show p-type conduction with a net acceptor concentration around 5 x10¹⁶ cm⁻³. The sample with an In content 0.37 shows phase separation when CP2Mg flow rate is increased. By using In0.23Ga0.77N films, an n⁺-p homo-junction structure is fabricated on a GaN template. For such a device, the response to the AM1.5 illumination is observed and Voc =1.5 V and Jsc=0.5 mA/cm² are obtained.