• DocumentCode
    3384656
  • Title

    Heterojunction photovoltaic devices utilizing single wall carbon nanotube thin films and silicon substrates

  • Author

    Zhou, Hang ; Unalan, Husnu Emrah ; Hiralal, Pritesh ; Colli, Alan ; Tan, Swee Ching ; Wang, Lin ; Kong, Fei ; Amaratunga, Gehan

  • Author_Institution
    Engineering Department, University of Cambridge, 9 JJ Thomson Avenue, CB3 0DF, USA
  • fYear
    2008
  • fDate
    11-16 May 2008
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    In this work, we demonstrate heterojunction photovoltaic devices utilizing transparent and conducting single wall carbon nanotube (SWNT) thin films as the p-layer on n-type crystalline silicon substrate. The best device shows a short circuit current of 2.74 mA/cm2 with an open circuit voltage of 0.4V (AM 1.5). In addition, the concept of applying SWNT film to a thin-film amorphous Si solar cell is also demonstrated. SWNT thin films can be applied via simple solution based methods. SWNT/Si heterojunction devices have remained stable under laboratory conditions for months so far.
  • Keywords
    Carbon nanotubes; Crystallization; Heterojunctions; Photovoltaic systems; Semiconductor thin films; Silicon; Solar power generation; Substrates; Thin film circuits; Thin film devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-1640-0
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2008.4922871
  • Filename
    4922871
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3384656