Title :
Analysis of carrier capture and escape in InGaAsP-InP quantum well lasers
Author :
Plyavenek, A.G. ; Lyubarskii, A.V.
Author_Institution :
United Optoelectron. Lab., Inst. of Radio Eng. Electron. & Autom., Moscow, Russia
Abstract :
We demonstrate that the combined effect of the space charge and 3D carrier reflections at quantum well boundaries plays a dominant role in determining the effective capture and escape times in InGaAsP-InP quantum well lasers.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; gallium compounds; indium compounds; laser theory; quantum well lasers; semiconductor device models; space charge; 3D carrier reflections; InGaAsP-InP; InGaAsP-InP quantum well lasers; carrier capture; carrier escape; effective capture times; effective escape times; quantum well boundaries; space charge; Charge carrier density; Indium phosphide; Laser modes; Laser theory; Laser transitions; Optical reflection; Poisson equations; Quantum well lasers; Radioactive decay; Space charge;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.553767
