Title :
CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner
Author :
Kumar, Bhaskar ; Vasekar, Parag ; Dhere, Neelkanth G. ; Koishiyev, Galymzhan T.
Author_Institution :
Florida Solar Energy Center, 1679 Clearlake Road, Cocoa, 32922-5703, USA
Abstract :
Copper indium gallium sulfide, CuIn1-xGaxS2 (CIGS2) solar cells prepared with chemical bath deposited heterojunction partner zinc-cadmium sulfide (ZnxCd1-xS) layer has exhibited better blue photon response and in turn, higher currents. This can be attributed to its higher bandgap than that of CdS. The open circuit voltages for CIGS2/ZnxCd1-xS were also higher than those of the CIGS2/CdS devices, indicating improved junction properties. A cross-over effect was indicated by J-V curves at different temperatures showing the need for further optimization.
Keywords :
Chemicals; Circuits; Copper; Gallium compounds; Heterojunctions; Indium; Photonic band gap; Photovoltaic cells; Voltage; Zinc;
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2008.4922889
