• DocumentCode
    3385016
  • Title

    CuIn1-xGaxS2 thin film solar cells with ZnxCd1-xS as heterojunction partner

  • Author

    Kumar, Bhaskar ; Vasekar, Parag ; Dhere, Neelkanth G. ; Koishiyev, Galymzhan T.

  • Author_Institution
    Florida Solar Energy Center, 1679 Clearlake Road, Cocoa, 32922-5703, USA
  • fYear
    2008
  • fDate
    11-16 May 2008
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Copper indium gallium sulfide, CuIn1-xGaxS2 (CIGS2) solar cells prepared with chemical bath deposited heterojunction partner zinc-cadmium sulfide (ZnxCd1-xS) layer has exhibited better blue photon response and in turn, higher currents. This can be attributed to its higher bandgap than that of CdS. The open circuit voltages for CIGS2/ZnxCd1-xS were also higher than those of the CIGS2/CdS devices, indicating improved junction properties. A cross-over effect was indicated by J-V curves at different temperatures showing the need for further optimization.
  • Keywords
    Chemicals; Circuits; Copper; Gallium compounds; Heterojunctions; Indium; Photonic band gap; Photovoltaic cells; Voltage; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-1640-0
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2008.4922889
  • Filename
    4922889