Analysis of the critical rise time in MOBILE-based circuits

Author

Quintana, José M. ; Avedillo, María J.

Author_Institution

Inst. de Microelectron. de Sevilla, Univ. de Sevilla, Sevilla

fYear

2008

fDate

Aug. 31 2008-Sept. 3 2008

Firstpage

938

Lastpage

941

Abstract

It is well known that there is a critical value for the rising time of the clocked bias signal which limits the operating speed of MOBILE-based circuits. This paper analyzes the transient response of a MOBILE-based follower and obtains analytical expressions to calculate the critical value for the rising time of the bias signal below which the circuit does not operate correctly. This analysis has been extended to more complex circuits such as threshold gates, we have also derived operating speed limits for these circuits. Results obtained have been validated through extensive simulations with HSPICE.

Keywords

SPICE; logic devices; resonant tunnelling diodes; transient response; HSPICE; MOBILE- based circuits; clocked bias signal; critical rise time; monostable-bistable transition logic element; resonant tunnelling diodes; transient response; Circuit simulation; Circuit topology; Clocks; Cost function; Diodes; Logic; Resonant tunneling devices; Signal analysis; Transient analysis; Transient response; Monostable-bistable Transition Logic Element (MOBILE); Nanoelectronics; Operating Speed; Resonant Tunnelling Diodes (RTDs);

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2008. ICECS 2008. 15th IEEE International Conference on

Conference_Location

St. Julien´s

Print_ISBN

978-1-4244-2181-7

Electronic_ISBN

978-1-4244-2182-4

Type

conf

DOI

10.1109/ICECS.2008.4675009

Filename

4675009