Title :
Preparation of Cu(In,Al)Se2 thin films by rapid thermal selenization
Author :
Lee, Shi-Wei ; Tseng, Bae-Heng
Author_Institution :
Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Abstract :
Thin films of Cu(In,Al)Se2 were prepared by rapid thermal annealing of pre-deposited elemental precursor films in an inert ambient. The stacking sequence of precursor films may affect the kinetics of phase formation. X-ray diffraction and TEM-EDS analysis indicated that a quaternary film with gradually changed Cu/(In+Al) ratio could be obtained at 600°C using a precursor film with Cu/Al/In/Se stacking sequence.
Keywords :
Artificial intelligence; Copper; Glass; Photonic band gap; Photovoltaic cells; Rapid thermal annealing; Stacking; Temperature; Transistors; X-ray diffraction;
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2008.4922890
