DocumentCode :
3385054
Title :
Impacts of the MTCMOS technology on power supply network: a full-chip perspective
Author :
Shi, Jin ; Cai, Yici
Author_Institution :
Dept.of Comput. Sci. & Technol., Tsinghua Univ., Beijing, China
fYear :
2009
fDate :
23-25 July 2009
Firstpage :
996
Lastpage :
999
Abstract :
Multi-threshold CMOS(MTCMOS) has been developed as one of the most efficient techniques to reduce leakage power. However, sleep transistor insertion might impose problems on power supply network design. We studied IR-drop variance by sleep transistor insertion at the full-chip level. Our work covered different modes, structures and tapping patterns. We identified in most cases the varied current distribution can be balanced locally well. Besides, ldquorush currentrdquo can have large and wide impacts.
Keywords :
CMOS integrated circuits; current distribution; power supply circuits; IR-drop variance; full-chip perspective; leakage power reduction; multithreshold CMOS technology; power supply network design; sleep transistor insertion; Analytical models; CMOS technology; Computer science; Current distribution; Electronic design automation and methodology; Emergency power supplies; Energy consumption; Leakage current; Power supplies; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications, Circuits and Systems, 2009. ICCCAS 2009. International Conference on
Conference_Location :
Milpitas, CA
Print_ISBN :
978-1-4244-4886-9
Electronic_ISBN :
978-1-4244-4888-3
Type :
conf
DOI :
10.1109/ICCCAS.2009.5250338
Filename :
5250338
Link To Document :
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