DocumentCode
3385297
Title
Annealing effects on lattice defects in lattice mismatched InGaAS on gaas
Author
Sasaki, T. ; Arafune, K. ; Sai, A. ; Ohshita, Y. ; Kamiya, I. ; Yamaguchi, M.
Author_Institution
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya, 468-8511, Japan
fYear
2008
fDate
11-16 May 2008
Firstpage
1
Lastpage
4
Abstract
Thermal annealing effects on lattice relaxations and defects were investigated in lattice-mismtached InGaAs layers on GaAs substrates. In the psudomorpic thin InGaAs layers, the lattice relaxation occurred by the annealing. In the partially relaxed thick InGaAs layers, the lattice relaxation was enhanced and the distribution of dislocation was changed. We found that the 2-step growth method was effective to reduce the residual strain and dislocation density in lattice mismatched InGaAs layers.
Keywords
Annealing; Capacitive sensors; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Lattices; Molecular beam epitaxial growth; Photovoltaic cells; Substrates; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location
San Diego, CA, USA
ISSN
0160-8371
Print_ISBN
978-1-4244-1640-0
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2008.4922903
Filename
4922903
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