Title :
Annealing effects on lattice defects in lattice mismatched InGaAS on gaas
Author :
Sasaki, T. ; Arafune, K. ; Sai, A. ; Ohshita, Y. ; Kamiya, I. ; Yamaguchi, M.
Author_Institution :
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya, 468-8511, Japan
Abstract :
Thermal annealing effects on lattice relaxations and defects were investigated in lattice-mismtached InGaAs layers on GaAs substrates. In the psudomorpic thin InGaAs layers, the lattice relaxation occurred by the annealing. In the partially relaxed thick InGaAs layers, the lattice relaxation was enhanced and the distribution of dislocation was changed. We found that the 2-step growth method was effective to reduce the residual strain and dislocation density in lattice mismatched InGaAs layers.
Keywords :
Annealing; Capacitive sensors; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Lattices; Molecular beam epitaxial growth; Photovoltaic cells; Substrates; Surface morphology;
Conference_Titel :
Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE
Conference_Location :
San Diego, CA, USA
Print_ISBN :
978-1-4244-1640-0
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2008.4922903
